SS150TA60110, ss150tc60110, ss150ti60110 v rrm = 600 v i f(avg) = 10 a c j = 80 pf symbol parameter test conditions maximum ratings v rrm repetitive peak reverse voltage 600 v v rsm repetitive surge reverse voltage 600 v v dc dc blocking voltage 600 v i f(avg) average forward current t j = 175 c 10 a i frm repetitive peak forward surge current t vj = 45 c, t p = 10 ms half sine wave d = 0.3 25 a t vj operating virtual junction temperature -55 to +175 c t stg storage temperature -55 to +175 c p tot t c = 25 c (20 w/device) 60 w symbol parameter test conditions t j = 25c unless otherwise specified typ. max. units v f forward voltage i f = 5 a, t j = 25 c t j = 175 c 1.6 2 1.8 2.4 v i r reverse current v r = 600 v, t j = 25 c t j = 175 c 10 20 50 200 a c j junction capacitance f = 1 mhz, v r = 0 v v r = 200 v v r = 600 v 485 85 80 pf r thjc thermal resistance 2.5 c/w t l lead soldering temperature 1.6 mm (0.063 in) from c ase for 10 s 300 c weight 2 g characteristic values isolation pin to substrate pin to pin >1800 >1500 v rms features ? 600 v sic schottky diode ? surface mount package ? zero reverse recovery ? zero forward recovery ? high frequency operation ? temperature independent behavior ? positive temperature coefficient for v f applications ? mhz switch mode power supplies ? high frequency converters ? resonant converters ? rectifier circuits silicon carbide schottky diode part number v rrm (v) i f(avg) (a) configuration SS150TA60110 600 10 triple common anode ss150tc60110 600 10 triple common cathode ss150ti60110 600 10 triple independent a = anode c = cathode triple cathode (tc) triple independent (ti) triple anode (ta) free datasheet http:///
SS150TA60110, ss150tc60110, ss150ti60110 fig. 1 fig. 2 fig. 3 fig. 4 fig. 5 capacitance vs. reverse voltage 0 1e-10 2e-10 3e-10 4e-10 5e-10 6e-10 0 100 200 300 400 500 600 v r (v) capacitance (f) forward voltage vs. current 0 2 4 6 8 10 12 0 0.5 1 1.5 2 forward voltage (v) forward current (a) leakage current vs. reverse voltage 0.001 0.01 0.1 1 0 100 200 300 400 500 600 reverse voltage (v) leakage current (a ) leakage current vs. temperature v r everse = 600 v 0.01 0.1 1 -50 0 50 100 temperature (c) leakage current (a) forward voltage vs. temperature i f = 10 a 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 temperature (c) normalized
SS150TA60110, ss150tc60110, ss150ti60110 dcb C direct copper bond under nickel plate on an a luminum nitride substrate, electrically isolated fr om any pin. fig. 6 package diagram top view side view a1 a2 a3 c1 c2 c3 ? 2013 ixys rf an ixys company 1609 oakridge dr., suite 100 fort collins, co usa 80525 970-493-1901 fax: 970-232-3025 email: sales@ixyscolorado.com web: http://www.ixyscolorado.com
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